发明名称 THIN VANADIUM OXIDE FILM PATTERN AND ITS PRODUCING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thin vanadium oxide film pattern, its producing method and its member. <P>SOLUTION: The thin vanadium oxide film pattern produced in such a way that an APTS-SAM and the like are produced on the surface of a substrate by using APTS (3-Aminopropyltriethoxysilane, H<SB>2</SB>NC<SB>3</SB>H<SB>5</SB>Si(OCH<SB>3</SB>)<SB>3</SB>) and the like, ultraviolet light is irradiated in vacuum to the APTS-SAM through a photomask to modify an exposing region from an amino group-ended silane to a silanol group and then a vanadium oxide is deposited in a liquid phase with a patterned self-assembled monomolecular film having the surfaces of the amino group-ended silane and the silanol group as a template to perform the patterning of the vanadium oxide, its producing method and a vanadium oxide-based device are provided. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009067622(A) 申请公布日期 2009.04.02
申请号 JP20070236341 申请日期 2007.09.12
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 MASUDA YOSHITAKE;KAWAMOTO KUNIHITO
分类号 C01G31/02;C03C17/42;C23C26/00 主分类号 C01G31/02
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