| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-semiconductor light emitting element in which operating voltage is controlled, comprising a nitride-based semiconductor and suitable for use at low voltage. SOLUTION: The nitride-semiconductor light emitting element comprises a p-type contact layer, a p-type intermediate layer formed beneath the p-type contact layer and a p-type clad layer formed beneath the p-type intermediate layer. The p-type contact layer is Mg-doped InAlGaN, the p-type intermediate layer is Mg-doped AlGaN, and the p-type clad layer is Mg-doped AlGaN. Band gap differences between the p-type contact layer and the p-type intermediate layer and between the p-type intermediate layer and the p-type clad layer are each≥100 meV. The band gap of the p-type intermediate layer is set to be a value between the band gap of the p-type contact layer and the band gap of the p-type clad layer. Mg concentration in the p-type intermediate layer is lower than Mg concentration in the p-type clad layer. COPYRIGHT: (C)2009,JPO&INPIT
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