| 摘要 |
PROBLEM TO BE SOLVED: To remove working strain and heavy metal of a ground portion. SOLUTION: After an unbonded portion 3 is removed, the ground portion 5 by grinding process is etched with an etchant 6 while oxide films 4 formed with carrier gas during a heat treatment are left on both sides 1b and 2b of semiconductor wafers 1 and 2, and then the oxide films 4 on the top and back surfaces of the semiconductor wafers 1 and 2 function as protective films not to etch both the top and back surfaces of the semiconductor wafers 1 and 2, so that only the ground portion 5 is etched by a predetermined amount. COPYRIGHT: (C)2009,JPO&INPIT
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