| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a bidirectional diode capable of exhibiting improved gate protection performance to the input of many kinds of surges. SOLUTION: A zener diode 9 made of polysilicon is formed on a field oxide film 6. The zener diode 9 has an N<SP>+</SP>-type region 10 and a P-type region 11 that are connected between a gate interconnection 14 and a source interconnection 13 and are arranged alternately between the gate interconnection and the source interconnection. The gate interconnection 14 and the source interconnection 13 are each connected to a different N<SP>+</SP>-type region 10, the planar shapes of two P-type regions 11 adjacent to the N<SP>+</SP>-type region 10 differ between the N<SP>+</SP>-type regions 10, and the planar shapes of the two N<SP>+</SP>-type regions 10 adjacent to the P-type region 11 differ. COPYRIGHT: (C)2009,JPO&INPIT
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