| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which normally-off operation can be obtained. SOLUTION: The semiconductor apparatus includes a first nitride semiconductor layer, a second nitride semiconductor layer which is provided on the first nitride semiconductor layer and has a larger band gap than the first nitride semiconductor layer, a source electrode provided on the second nitride semiconductor layer, a drain electrode provided on the second nitride semiconductor layer, an insulating layer provided between the source electrode and the drain electrode on the surface of the second nitride semiconductor layer, a p-type third nitride semiconductor layer provided on the insulating layer, and a gate electrode provided on the third nitride semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT
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