| 摘要 |
A method of operating a non-volatile memory array is provided. The non-volatile memory array includes a substrate, a number of rows of memory cells, a number of control gate lines, a number of select gate lines, a number of source lines, and a number of drain lines. The operating method includes applying 5V voltage to a selected source line, 1.5V voltage to a selected select gate line, 8V voltage to non-selected select gate lines, 10-12V voltage to a selected control gate line and 0--2V voltage to non-selected control gate lines and the substrate. The drain lines are grounded so that source-side injection (SSI) is triggered to inject electrons into a floating gate of the selected memory cell in a programming operation.
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