发明名称 HEAT TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which can have an annealing time of annealing and a temperature profile freely set. <P>SOLUTION: A capacitor 93, a coil 94, a flash lamp FL, and a switching element 96 such as an IGBT are connected in series. A controller 3 can output a pulse signal to the gate of the switching element 96. A waveform setter 32 sets the waveform of the pulse signal, based on the contents of input from an input unit 33. With electrical charge accumulated in the capacitor 93, a pulse signal is output to the gate of the switching element 96 so that the flash lamp FL emits light intermittently. A change in the waveform of the pulse signal applied to the switching element 96 will change the waveform of current flowing through the flash lamp FL and, accordingly, the form of light emission changes, thereby resulting in a change in the temperature profile for a semiconductor wafer. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009070948(A) 申请公布日期 2009.04.02
申请号 JP20070236249 申请日期 2007.09.12
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KUSUDA TATSUFUMI
分类号 H01L21/26;H01L21/31 主分类号 H01L21/26
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