| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a metal diffusion preventing function by a nitride containing layer used for a barrier layer between two metal layers is enhanced, and adhering function between each of the metal layers and the nitride containing layer is enhanced. <P>SOLUTION: The semiconductor device includes: a first metal film 2; a first barrier film 5 composed of three TiWN layers 5a to 5c formed on the first metal film 2 each having different nitride concentration decreasing as the distance from the first metal film 2 becoming larger; a second metal film 6 formed on the first barrier film 5; a second barrier film 11 composed of four TiWN layers 11a to 11d formed on the second metal film 6 each having different nitride concentration decreasing as the distance from the second metal film 6 becoming larger; a bump electrode 13 for connecting to solder, formed on the second barrier film 11. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
