| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory for suppressing the increase of a current consumption (power consumption). <P>SOLUTION: This memory (diode ROM) is equipped with: a plurality of word lines 7; a plurality of bit lines 8 to be arranged so as to intersect with the plurality of word lines 7; memory cells 9 arranged on the positions where the word lines 7 and the bit lines 8 intersect with each other; and transistors 42 connected to the bit lines 8. A current driving ability of the transistor 42 is constituted so as to vary according to the positions where the bit lines 8 are arranged. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
