| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving element and its manufacturing method wherein an insulating film exhibits a desired function as a low reflection film and a dark current is restricted. SOLUTION: The method includes an insulating film formation process for forming an insulating film on a semiconductor; and an electrode formation process of forming an electrode at a position where a contact of the semiconductor should be taken. After the electrode formation process, it includes a resist formation process for insulating film protection wherein a resist is formed on the insulating film. It further includes a power feeding layer forming process of forming a metal power feeding layer on the resist and the electrode; after the power feeding layer formation process a plating formation process of performing plating formation on the power feeding layer in contact with the electrode; and after the plating formation process a power feeding layer etching process of etching the power feeding layer leaving a portion which should become the electrode. Further, after the power feeding layer etching process, the method includes a resist removal process for insulating film protection of removing the resist. COPYRIGHT: (C)2009,JPO&INPIT
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