METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can suppress new problems of STI. SOLUTION: The method of manufacturing the semiconductor device includes the steps of: (a) forming a mask layer having an opening in a plane shape including an element isolation region above an Si substrate; (b) forming a sidewall spacer of a material which can be selectively removed for a mask layer on an opening sidewall of the mask layer; (c) forming a trench by etching the Si substrate using the sidewall spacer as a mask; (d) forming the element isolation region burying the trench; (e) selectively removing the sidewall spacer; (f) ion-injecting nitrogen from above the Si substrate; (g) removing the mask layer; and (h) forming a semiconductor element in an active region defined by the insulating element isolation region. COPYRIGHT: (C)2009,JPO&INPIT