| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of speedup, and its manufacturing method. SOLUTION: A control gate electrode 5a is formed on a surface of a well region 3, with a control gate insulating film 4 interposed. A memory gate electrode 7a is formed on one of side faces of the control gate electrode 5a with an ONO film 6 interposed. A lightly-doped region 10a and a heavily-doped region 12a as the drain region D, and a lightly-doped region 10b and a heavily-doped region 12b as a source region S are formed on the well region. A silicon nitride film 14 is formed, as a film with relative intense tension stress, is formed to cover the control gate electrode 5a and the memory gate electrode 7a. An interlayer insulating film 20 is further formed so as to cover the silicon nitride film 14. Thus, electron mobility can be improved with the tensile stress applied to a channel region, and thereby transistor current is increased. COPYRIGHT: (C)2009,JPO&INPIT
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