| 摘要 |
According to an aspect of the present invention, there is provided an optical semiconductor device, comprising, a first AlN clad-layer, a first nitride semiconductor guide-layer formed on the first AlN clad-layer, refractive index of the first nitride semiconductor guide-layer being larger than refractive index of the first AlN clad-layer, a nitride semiconductor core-layer formed on the first nitride semiconductor guide-layer, refractive index of the nitride semiconductor core-layer being larger than refractive index of the first AlN clad-layer and smaller than refractive index of the first nitride semiconductor guide-layer, a second nitride semiconductor guide-layer formed on the nitride semiconductor core-layer, refractive index of the second nitride semiconductor guide-layer being larger than refractive index of the nitride semiconductor core-layer, a second AlN clad-layer formed on the second nitride semiconductor guide-layer.
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