| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a decrease in reliability by suppressing the occurrence of a migration phenomenon. SOLUTION: The semiconductor device 100 comprises: a film substrate 10 including a base material section 1 made of a polyimide film and a plurality of wiring leads 2 formed on the base material section 1; a semiconductor chip 20 that includes a plurality of gold bumps 21 and is packaged on the film substrate 10 while being electrically connected to an inner lead section 2a of the wiring leads 2 via the gold bumps 21; and an underfill resin layer 30 filled between the film substrate 10 and the semiconductor chip 20. Then, the base material section 1 has a packaging region 3 where the semiconductor chip 20 is packaged, and the surface of a packaging region 3 at the base material section 1 is roughened by atmospheric pressure plasma treatment or surface treatment using a KMnO<SB>4</SB>solution. COPYRIGHT: (C)2009,JPO&INPIT |
