PROCESS FOR FORMING A WIRE PORTION IN AN INTEGRATED ELECTRONIC CIRCUIT
摘要
<p>A process for forming a wire portion (101, 102) in an integrated electronic circuit comprises epitaxially growing the wire portion on a side surface of a seed layer portion (11, 12). Cross-sectional dimensions of the wire portion correspond to a thickness of the seed layer portion and to a duration of the growing step. The seed layer portion is then selectively removed while the wire portion is retained fixedly on the circuit. Afterwards, heating of the circuit can cause the wire portion becoming rounded in cross-section. The wire portion obtained may be about 10 nanometers in diameter. It may be used for forming a channel of a MOS transistor devoid of short channel effect.</p>
申请公布号
WO2009040328(A1)
申请公布日期
2009.04.02
申请号
WO2008EP62622
申请日期
2008.09.22
申请人
STMICROELECTRONICS (CROLLES 2) SAS;NXP B.V.;CORONEL, PHILIPPE;DUMONT, BENJAMIN;POUYDEBASQUE, ARNAUD;MUELLER, MARKUS
发明人
CORONEL, PHILIPPE;DUMONT, BENJAMIN;POUYDEBASQUE, ARNAUD;MUELLER, MARKUS