| 摘要 |
PROBLEM TO BE SOLVED: To enable easy manufacture of a floating diffusion (FD) portion having a small capacitance. SOLUTION: A first conductive film 52 consisting of non-doped conductive silicon is formed on a gate insulating film 43 formed on a silicon substrate 40 (Fig. 5(A)). A resist mask R2 having an opening at the position directly above the forming region of the FD portion is formed on the first conductive film 52, and etching is carried out to remove the first conductive film 52 and the gate insulating film 43 directly under the opening to form an opening 46 (Fig. 5(B)). The FD portion 16 is formed in the surface layer of the silicon substrate 40 (Fig. 5(C)) by removing the resist mask R1 and implanting n-type impurity ions (As<SP>+</SP>) from above the first conductive film 52. Thereafter, a gate electrode of a drive transistor in contact with the FD portion 16 is formed by patterning the first conductive film 52, and further forming a second conductive film consisting of non-doped conductive silicon to cover the whole surface of the first conductive film 52, and then patterning the second conductive film. COPYRIGHT: (C)2009,JPO&INPIT
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