发明名称 MULTI-DIRECTIONAL TRENCHING OF A DIE IN MANUFACTURING SUPERJUNCTION DEVICES
摘要 A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.
申请公布号 US2009085147(A1) 申请公布日期 2009.04.02
申请号 US20080031895 申请日期 2008.02.15
申请人 ICEMOS TECHNOLOGY CORPORATION 发明人 ISHIGURO TAKESHI;SUGIURA KENJI;GRIFFIN HUGH J.
分类号 H01L21/76;H01L27/00 主分类号 H01L21/76
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