| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate capable of suppressing the occurrence of cracks, crystal defects or the like in a nitride semiconductor single crystal layer and improving the crystallinity of the nitride semiconductor single crystal layer. <P>SOLUTION: The compound semiconductor substrate comprises a first intermediate layer 110 that is formed on an Si single crystal substrate 100 with a crystal surface orientation set to a ä111} plane while a 3C-SiC single crystal layer 110a and a metal compound layer 110b each composed of one of TiC, TiN, VC, and VN are laminated on each other in this order and the uppermost layer α is formed of either the 3C-SiC single crystal layer 110a or the metal compound layer 110b. <P>COPYRIGHT: (C)2009,JPO&INPIT |
