| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-frequency power generating device that can stably hold a semiconductor element through an elastic body to improve the reliability thereof. <P>SOLUTION: The high-frequency power generating device which has a flat plate type substrate electrode 28, a plurality of high-frequency power amplifying elements 26 disposed on the substrate electrode, and elastic bodies 31 disposed on the respective high-frequency power amplifying elements, and presses the high-frequency power amplifying elements by the elastic bodies toward the substrate electrode to press and bring the high-frequency power amplifying elements into contact with the substrate electrode is equipped with a gate type press block 22 which has recessed portions each for storing one end of an elastic body at a beam portion thereof and is fixed to the substrate electrode through a column portion thereof, wherein the elastic body has one end brought into contact with the high-frequency power amplifying element and the other end brought into contact with the bottom of the recessed portion to stably press and bring the high-frequency power amplifying element into contact with the substrate electrode with uniform force. <P>COPYRIGHT: (C)2009,JPO&INPIT |
