| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-defect thin film which is extremely little in deposition defects such as particles attached or embedded in a film under growth and a low-defect deposition method which is a method for manufacturing the same. SOLUTION: In the deposition method performing thin-film formation by irradiating a target material with ions in a vacuum chamber to deposit the constitution material of the target material on a substrate, at least one or more seconds of non-irradiation time is set within one period of a first operation period of intermittent ion irradiation consisting of ion irradiation and ion non-irradiation. COPYRIGHT: (C)2009,JPO&INPIT
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