发明名称 |
ELECTRICAL CONTACTS FOR INTEGRATED CIRCUITS AND METHODS OF FORMING USING GAS CLUSTER ION BEAM PROCESSING |
摘要 |
Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor.
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申请公布号 |
US2009085211(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
US20070864334 |
申请日期 |
2007.09.28 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
ROBISON RODNEY L.;TRICKETT DOUGLAS |
分类号 |
H01L23/52;H01L21/425 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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