发明名称 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT FOR PROTECTING SEMICONDUCTOR DEVICE
摘要 A discharge circuit holds the potential difference between a power supply terminal and reference potential terminal at a predetermined value. The gates of a first pMOSFET and first nMOSFET are connected to an input terminal. A second pMOSFET is connected between the first pMOSFET and power supply terminal, and has a gate to which a first signal is supplied. A second nMOSFET is connected between the first nMOSFET and reference potential terminal, and has a gate to which a second signal is supplied. A detection circuit outputs the first signal which turns on the second pMOSFET and the second signal which turns on the second nMOSFET, while the potential difference is held at the predetermined value. The detection circuit outputs the first signal which turns off the second pMOSFET and the second signal which turns off the second nMOSFET, while the potential difference deviates from the predetermined value.
申请公布号 US2009086393(A1) 申请公布日期 2009.04.02
申请号 US20080236045 申请日期 2008.09.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 WATANABE KENTARO
分类号 H02H9/04 主分类号 H02H9/04
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