COMPOUND IC

摘要

PROBLEM TO BE SOLVED: To provide a compound IC which improves a LDMOS transistor prepared therein in a tradeoff relation existing between an on-state resistance and a breakdown voltage. SOLUTION: The compound IC 10 includes a LDMOS transistor 20 in at least one of a plurality of island regions divided by a trench insulated separation portion 50 including a first embedded conductor 52 covered with a first side wall oxidation film 54. The compound IC 10 is provided with trench portions 60 which are provided in the island region and each of which includes a second embedded conductor 62 opposite to a side of a body region 28 between a side of a drift region 22 of the LDMOS transistor 20 and/or a source region 26, and the drift region 22, through a second side wall oxidation film 64. The first embedded conductor 52 of the trench insulated separation portion 50 and the second embedded conductor 62 of the trench portion 60 are electrically isolated. The trench insulated separation portion 50 and the trench portion 60 are formed in the same manufacturing process. COPYRIGHT: (C)2009,JPO&INPIT