| 摘要 |
Spacers (175) are formed by pitch multiplication and a layer of negative photoresist (200) is deposited on and over the spacers (175) to form additional mask features. The deposited negative photoresist layer (200) is patterned, thereby removing photoresist from between the spacers (175) in some areas. During patterning, it is not necessary to direct light to the areas where negative photoresist removal is desired, and the clean removal of the negative photoresist from between the spacers (175) is facilitated. The pattern defined by the spacers (175) and the patterned negative photoresist is transferred to one or more underlying masking layers (130), (140) before being transferred to a substrate (110). |
