| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form recesses, the dispersion of the shape of which is few, in a substrate made of silicon. SOLUTION: In the first oxide membrane etching process, in the first oxide membrane etching process (at the step S4), the side wall part 305 of the recess 304 formed in an oxide membrane 301 by etching is equipped with an inclined pat 307 having an inclination angleαobtained by isotropic etching and, at the same time, the depth distance L1 obtained by the etching of the inclined part 307 of the oxide membrane is formed by etching larger in depth distance than the depth distance of the oxide membrane etched in the second oxide membrane etching process (at the step S6). COPYRIGHT: (C)2009,JPO&INPIT
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