摘要 |
In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.
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