Disclosed is a method and structure for a fin-type field effect transistor (FinFET) structure that has different thickness gate dielectrics (502, 504) covering the fins (112, 113, 114) extending from the substrate (110). These fins have a central channel region and source (60) and drain (62) regions on opposite sides of the channel region. The thicker gate dielectrics (504) can comprise multiple layers of dielectric (200, 500) and the thinner gate dielectrics (502) can comprise less layers of dielectric (200). A cap (116) comprising a different material than the gate dielectrics can be positioned over the fins.
申请公布号
WO2005089440(A3)
申请公布日期
2009.04.02
申请号
WO2005US08940
申请日期
2005.03.18
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;CLARK, WILLIAM, F., JR.;NOWAK, EDWARD, J.