| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently perform exposure for eliminating an unnecessary pattern at a periphery of a substrate without making the structure of a stage too complicated and without decreasing the throughput of an exposure step. <P>SOLUTION: An exposure apparatus which exposes a wafer W to a pattern of a reticle R has a reticle stage 31 having a lighting optical system ILS and an opening 31c for setting an exposure region 35P to be irradiated with exposure light on the wafer W not through the pattern, and a wafer stage 39 which moves the wafer W in a Y direction and an X direction while exposing the wafer W in the exposure region 35P. <P>COPYRIGHT: (C)2009,JPO&INPIT |
