| 摘要 |
PROBLEM TO BE SOLVED: To suppress a formation of void inside a semiconductor device to be obtained and enhance its reliability even in the case where a misregistration occurs between a resist pattern for forming a damascene wiring layer and a wiring layer when, especially, the damascene wiring layer formed by using a damascene method is electrically connected to other wiring layers to form the semiconductor device having the wiring layer of a multilayer structure. SOLUTION: The semiconductor device is configured to comprise: a lower wiring layer which is formed inside a first insulating layer and has an upper part protruding from the first insulating layer; a second insulating layer formed in such a way that at least the side of the lower wiring layer is covered up to a same surface level with an upper face of the lower wiring layer on the first insulating layer; and an upper wiring layer which is formed inside a third insulating layer, and has its lower face coming into contact with only a portion positioned at the same surface level with the upper face of the lower wiring layer and the upper face of the lower wiring layer of the second insulating layer. COPYRIGHT: (C)2009,JPO&INPIT
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