发明名称 |
Semiconductor devices using fine patterns and methods of forming fine patterns |
摘要 |
Example embodiments may provide fine patterns for semiconductor devices and methods of forming fine patterns for semiconductor devices. Example methods may include forming a spacer pattern on a substrate and/or an insulating layer pattern adjacent to sides of the spacer pattern and/or disposed at the same level as the spacer pattern, forming a pair of recesses exposing sides of the spacer pattern by removing a portion of the insulating layer pattern, and/or filling a conductive material in the recesses.
|
申请公布号 |
US2009087986(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
US20080222842 |
申请日期 |
2008.08.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JEONG-HO;PARK YOUNG-HOON;JUNG SANG-IL;KIM UI-SIK;YANG JUN-SEOK |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|