发明名称 |
CU-NI-SI-CO-BASE COPPER ALLOY FOR ELECTRONIC MATERIAL AND PROCESS FOR PRODUCING THE COPPER ALLOY |
摘要 |
<p>This invention provides a Cu-Ni-Si-Co-base alloy possessing excellent strength, electroconductivity and press punchability. The Cu-Ni-Si-Co-base alloy is a copper alloy for an electronic material and comprises Ni: 1.0 to 2.5% by mass, Co: 0.5 to 2.5% by mass, and Si: 0.30 to 1.2% by mass with the balance consisting of Cu and unavoidable impurities. The observation of a cross section parallel to the rolling direction of the copper alloy, for a variation in composition and the area ratio of second phase particles having a diameter of not less than 0.1 µm and not more than 1 µm, shows that the middle value ? (% by mass) of the amount of [Ni + Co + Si] is 20 (% by mass) = ? = 60 (% by mass), the standard deviation s(Ni + Co + Si) is s(Ni + Co + Si) = 30 (% by mass), and the area ratio S (%) is 1% = S = 10%.</p> |
申请公布号 |
WO2009041197(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
WO2008JP65020 |
申请日期 |
2008.08.22 |
申请人 |
NIPPON MINING & METALS CO., LTD.;ERA, NAOHIKO;KUWAGAKI, HIROSHI |
发明人 |
ERA, NAOHIKO;KUWAGAKI, HIROSHI |
分类号 |
C22C9/06;B21B3/00;C22F1/00;C22F1/08;H01B1/02;H01B13/00;H01L23/50 |
主分类号 |
C22C9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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