| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate for growing gallium nitride and a method for preparing the substrate for growing gallium nitride. <P>SOLUTION: The method for preparing the substrate for growing gallium nitride includes performing thermal cleaning on a surface of a silicon substrate, forming a Si<SB>3</SB>N<SB>4</SB>micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the gallium nitride substrate and the method for preparing the substrate for growing gallium nitride and reduce process cost. <P>COPYRIGHT: (C)2009,JPO&INPIT |
