| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a variable attenuator, used with high frequency, in which variable attenuation per stage is large. <P>SOLUTION: The variable attenuator includes: a MOSFET 12 having a gate, a drain, a source, and a body; an attenuation control circuit 14; and a temperature compensation circuit 21. The attenuation control circuit 14 supplies a control voltage to the gate, the drain, and the source. The temperature compensation circuit 21 supplies a temperature compensation voltage to the body. An input terminal and an output terminal are connected to the drain and the source of a MOSFET 12. The temperature characteristics compensation circuit 21, in accordance with an operating temperature of the MOSFET 12, controls a voltage to be supplied to the body and adjusts, based on a relation between a body voltage and a gate voltage, a resistance value of a current flowing between the input terminal and the output terminal. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
