| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method surely drying a substrate after development. SOLUTION: After a developer on a substrate W is washed away by a rinse liquid, the rotational speed of the substrate W decreases and a liquid layer L of the rinse liquid is formed on the entire surface of the substrate W. Then, the rotational speed of the substrate W increases and hence a centrifugal force becomes larger than tension, thus holding the liquid layer L on the substrate W while the thickness of a periphery becomes larger and that of the center becomes small. Then, gas is discharged from the gas supply nozzle 75 to the center of the liquid layer L, and a hole H is formed at the center of the liquid layer L, thus extinguishing tension in harmony with the centrifugal force operating on the periphery of the liquid layer L. Also, the rotational speed of the substrate W increases along with the discharge of gas, so that the liquid layer L moves toward the outside of the substrate W. COPYRIGHT: (C)2009,JPO&INPIT |
