| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device highly integrated while maintaining excellent operation. SOLUTION: The semiconductor storage device has a first word line 20, a second word line 33, and a memory cell including a bit line, a capacitor, and a transistor, wherein the transistor has a columnar semiconductor layer 14 projecting from a semiconductor substrate primary surface, a gate insulating film 19 formed on a side surface of the columnar semiconductor layer 14, a gate electrode 20 provided covering the side surface of the columnar semiconductor layer 14, an upper diffusion layer formed on the columnar semiconductor layer 14, and a lower diffusion layer 18 formed at a semiconductor substrate part below the side surface of the columnar semiconductor layer 14. The semiconductor storage device has: a first cell array portion where memory cells each including a transistor and a capacitor are arranged; and a second memory cell array portion where dummy cells are arranged in the same layout with the first cell array portion, first word lines 20 and second word lines 33 being connected to each other through a conduction plug 30 at the second cell array portion. COPYRIGHT: (C)2009,JPO&INPIT
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