发明名称 SUBSTRATE SUPPORTING APPARATUS, SUBSTRATE SUPPORTING METHOD, SEMICONDUCTOR MANUFACTURING APPARATUS AND STORAGE MEDIUM
摘要 A substrate supporting apparatus includes a substrate supporting portion having a substrate supporting surface facing a rear surface of a substrate; plural protruding portions provided on the substrate supporting surface, for preventing the substrate from being slid on the substrate supporting surface by friction force generated in relation with the substrate; a gas discharge opening provided in the substrate supporting surface, for discharging gas toward the rear surface of the substrate; a gas flow path whose one end is connected to the gas discharge opening; and a temperature control unit for controlling temperature of the gas flowing through the gas flow path, wherein the gas discharged to the rear surface of the substrate flows in a gap between the substrate supporting surface and the substrate, and by Bernoulli effect causing reduction of pressure of the gap, the substrate is attracted to the substrate supporting portion, thereby supporting the substrate.
申请公布号 US2009087932(A1) 申请公布日期 2009.04.02
申请号 US20080209687 申请日期 2008.09.12
申请人 TOKYO ELECTRON LIMITED 发明人 KONDOH KEISUKE
分类号 H01L21/00;H01L21/30;H01L21/306 主分类号 H01L21/00
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