发明名称 |
METHOD OF FORMING FINE PATTERNS AND MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME |
摘要 |
A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.
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申请公布号 |
US2009087994(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
US20080239122 |
申请日期 |
2008.09.26 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD |
发明人 |
LEE JONG HO;PARK MOO YOUN;HWANG SOO RYONG;JUNG IL HYUNG;LEE GWAN SU;KIM JIN HA |
分类号 |
H01L21/302;H01L33/06;H01L33/10;H01L33/16;H01L33/32;H01L33/42 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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