发明名称 |
VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH |
摘要 |
Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated vertical diode for a finned semiconductor apparatus. Process embodiments include the formation of vertical-diode apparatus.
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申请公布号 |
US2009085163(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
US20070862964 |
申请日期 |
2007.09.27 |
申请人 |
RUSS CHRISTIAN;PACHA CHRISTIAN;JENEI SNEZANA;SCHRUEFER KLAUS |
发明人 |
RUSS CHRISTIAN;PACHA CHRISTIAN;JENEI SNEZANA;SCHRUEFER KLAUS |
分类号 |
H01L29/861;H01L21/329 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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