SEMICONDUCTOR SUBSTRATE WITH THROUGH-CONTACT AND METHOD FOR PRODUCTION THEREOF

摘要

The through-contact of the substrate is formed by a contact hole filling (4) of a semiconductor layer (11) and a metallization (17) of a cutout (16) in a rear-side semiconductor layer (13), wherein the semiconductor layers are separated from one another by a buried insulation layer (12), at the layer position of which the contact hole filling and the metallization respectively end.