NITRIDE-GROUP SEMICONDUCTOR LIGHT-EMITTING ELEMENT, NITRIDE-GROUP SEMICONDUCTOR LASER ELEMENT, NITRIDE-GROUP SEMICONDUCTOR LIGHT EMITTING DIODE, THEIR MANUFACTURING METHOD, AND NITRIDE-GROUP SEMICONDUCTOR LAYER FORMING METHOD

摘要

Provided is a nitride-group semiconductor light emitting element, which can restrain a manufacturing process from becoming complex and can suppress the reduction of a luminous efficiency. This nitride-group semiconductor light emitting element (50) comprises a nitride-group semiconductor element layer (23) formed over the main surface of a (1-100) plane of a substrate (21) and including a light emitting layer (26) having the (1-100) plane as the main plane, an end face (50a) formed at the end portion of a region having the light emitting layer (26) of the nitride-group semiconductor element layer (23) and including a (000-1) plane extending in a direction substantially normal to the main plane (or the (1-100) plane) of the light emitting layer (26), and a reflecting face (50c) formed in the region confronting the end face (50a) of the (000-1) plane, including the grown face of the nitride-group semiconductor element layer (23), and extending in a direction inclined by an angle (?1 (about 62 degrees)) with respect to the end face (50a).