Layer deposition apparatus, e.g. for epitaxial deposition of compound semiconductor layers, has segmented process gas enclosure in which substrate is moved relative to partition

摘要

Layer deposition apparatus comprises a chamber (10) with a support (12) for substrate(s) (13) to be coated; a process gas enclosure (11) separated into first and second segments (21, 22) by a partition (23); and a system for moving the substrate(s) relative to the partition. An independent claim is included for a method of operating the apparatus, involving: (A) locating the substrate(s) (13) to be coated on the support (12); (B) setting up first and second operating conditions respectively in the first and second segments (21, 22) of the process gas enclosure (11), separated by the partition (23); and (C) moving the substrate(s) relative to the partition.