发明名称 POWER ON RESET CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 A power on reset circuit of a semiconductor device is provided to control a fuse circuit of the power on reset circuit of the semiconductor device to differently set input detection voltage levels to operate at different time in order to distribute current consumption, thereby reducing initial fail of elements. A power on reset circuit of a semiconductor device comprises a detection voltage generating device(100) and an electric potential sensor(200). The detection voltage generating device comprises the first electric potential controller(110) and the second electric potential controller(120). The first electric potential controller comprises a plurality of PMOS transistors(PM1~PMn+3) and a plurality of fuses(F1~Fn). The second electric potential controller comprises a plurality of resistances(R1~Rn+1) and a plurality of fuses(RF1~RFn). The electric potential sensor comprises a sensing unit(210) and a stabilizing unit(220). The electric potential sensor receives the detection voltage. If the detection voltage is larger than a set voltage, the detection voltage is detected to output a power on control signal.
申请公布号 KR100891389(B1) 申请公布日期 2009.04.02
申请号 KR20070111726 申请日期 2007.11.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 WON, SAM KYU;CHA, JAE WON;KANG, IN HO;BAEK, KWANG HO
分类号 G11C7/20;G11C5/14 主分类号 G11C7/20
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