METHOD FOR FORMING AN OXYNITRIDE SPACER FOR A METAL GATE ELECTRODE USING A PECVD PROCESS WITH A SILICON-STARVING ATMOSPHERE,申请号KR20047007987-传众专利搜索

发明名称	METHOD FOR FORMING AN OXYNITRIDE SPACER FOR A METAL GATE ELECTRODE USING A PECVD PROCESS WITH A SILICON-STARVING ATMOSPHERE
摘要	A semiconductor device including a semiconductor substrate; a metal gate electrode; and a silicon oxynitride spacer formed on a surface of the metal gate electrode, wherein an interface of the silicon oxynitride spacer and the metal gate electrode is substantially free of metal silicide. In one embodiment, the silicon oxynitride spacer includes a first portion and a second portion, in which the first portion is formed under starving silicon conditions.
申请公布号	KR100891367(B1)	申请公布日期	2009.04.02
申请号	KR20047007987	申请日期	2002.10.11
申请人		发明人
分类号	H01L21/28;H01L21/318;C23C16/30;H01L21/283;H01L21/31;H01L21/314;H01L21/469;H01L21/768;H01L23/522;H01L29/423;H01L29/49;H01L29/76;H01L29/78;H01L29/786;(IPC1-7):H01L21/318	主分类号	H01L21/28
代理机构		代理人
主权项
地址