发明名称 RESIST SUBSTRATE AND CONTACT EXPOSURE METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist substrate and contact exposure method that improve conditions of extension in exposure time and decrease in resolution, while preventing resist deposition on a photomask after exposure, and also perform good exposure even on the occurrence of surge on a surface of a resist layer and deposition of contamination, or mixing of air bubbles. <P>SOLUTION: The resist substrate 4 is characterized in that the resist layer 2 is formed on the substrate 1 and a photomask layer 3 adheres on an upper surface of the resist layer 2. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009069592(A) 申请公布日期 2009.04.02
申请号 JP20070239129 申请日期 2007.09.14
申请人 TOPPAN PRINTING CO LTD 发明人 INOKUCHI DAISUKE
分类号 G03F7/26;G03F1/54;G03F7/20;H01L21/027 主分类号 G03F7/26
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