| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of crystal growth of group III nitride and equipment for crystal growth of group III nitride capable of crystal growing a group III nitride having a preferable size for practically manufacturing a device such as a light emitting diode of high performance, or an LD, with low cost and high performance. SOLUTION: A mixed molten liquid vessel 102 is filled with a mixed melt 103 which is composed of Ga as group III metal, and Na as alkali metal, wherein, pulity of Na is 99%, purity of Ga is 99.9999%, and purity of nitrogen gas is 99.999%, in the case of the material of vessel for mixed melt is sintered BN, solid matter 110 is formed in a shape having holes 111. Through the holes 111 the nitrogen gas is dissolved into the mixed melt 103, thereby the single crystal of GaN 109 as a group III nitride can be grown in the mixed melt 103. |
