发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor light emitting device is provided with a GaAs substrate, a quantum dot active layer formed over the GaAs substrate, a GaAs layer formed above or below the quantum dot active layer, and a diffraction grating formed from InGaP or InGaAsP and periodically provided along an propagating direction of light in the GaAs layer.
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申请公布号 |
US2009086785(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
US20080199507 |
申请日期 |
2008.08.27 |
申请人 |
FUJITSU LIMITED;THE UNIVERSITY OF TOKYO |
发明人 |
HATORI NOBUAKI;YAMAMOTO TSUYOSHI;MATSUDA MANABU;ARAKAWA YASUHIKO |
分类号 |
H01S5/125;B82Y20/00;H01S5/12;H01S5/343 |
主分类号 |
H01S5/125 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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