NAND STRINGS WITH OFFSET CHARGE STORAGE LAYERS AND MANUFACTURING METHOD THEREOF
摘要
<p>A plurality of non- volatile storage elements on a common active layer are offset from neighbor non- volatile storage elements. This offsetting of non-volatile storage elements helps reduce interference from neighbor non-volatile storage elements. A method of manufacture is also described for fabricating the offset non-volatile storage elements. For example, a NAND string over active area (100) has a charge storage nitride layer (112) that is vertically offset to the charge storage layer (112) of the NAND string over active area (202).</p>
