| 摘要 |
<p>A manufacturing method of a semiconductor device is provided to form a side barrier metal for preventing the oxidation of the gate tungsten by using the tungsten silicide. A gate poly silicon(12), a barrier metal(14), a gate tungsten(16), and a gate hard mask nitride film(18) are successively evaporated on the top of a semiconductor substrate(10). A gate hard mask nitride film and a gate tungsten are etched by using the gate mask. The undercut is formed by overetching the exposed part of the gate tungsten. A tungsten silicide(WSix)(20) is evaporated in the front side of the semiconductor substrate. The gate tungsten is surrounded by the side wall barrier metal by etching the tungsten silicide. The barrier metal and the gate poly silicon are etched by using the gate mask. A selective oxide layer(22) is formed in the exposed part of the gate poly silicon.</p> |
