发明名称 |
OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS AND THYRISTORS |
摘要 |
An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype. |
申请公布号 |
KR20090033233(A) |
申请公布日期 |
2009.04.01 |
申请号 |
KR20097001008 |
申请日期 |
2007.06.19 |
申请人 |
SEMISOUTH LABORATORIES, INC. |
发明人 |
MAZZOLA MICHAEL S. |
分类号 |
H01L31/10;H01L31/16;H02M7/00 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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