| 摘要 |
A cleaning agent for a semiconductor device is provided to effectively remove impurities on the surface of a semiconductor device provided with copper wiring, without causing corrosion or oxidation of the copper wiring and roughening of the planarized surface. A cleaning agent for cleaning a semiconductor device having copper wiring on the surface thereof after a chemical mechanical polishing process in a production process of the semiconductor device, comprises a compound represented by the following formula (I): X1-L-X2, wherein X1 and X2 independently represent a monovalent substituent formed by removing one hydrogen atom from a heterocycle containing at least one nitrogen atom, and L represents a divalent linking group.
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